Toshiba Launches Low ON-Resistance Power MOSFET for Automotive Applications

-40V P-ch MOSFET capable of reducing conduction losses is added to the line-up

TOKYO — (BUSINESS WIRE) — March 16, 2015Toshiba Corporation’s (TOKYO:6502) Semiconductor & Storage Products Company today announced the launch of a -40V P-ch power MOSFET for automobile applications. The latest addition to the MOSFET line-up, “TJ200F04M3L,” starts shipment from today.

Toshiba: -40V P-ch power MOSFET for automobile applications "TJ200F04M3L" (Photo: Business Wire)

Toshiba: -40V P-ch power MOSFET for automobile applications "TJ200F04M3L" (Photo: Business Wire)

The new product achieves the industry’s leading-class[1] low ON-resistance by mounting a chip fabricated with Toshiba’s U-MOS VI trench process in a TO-220SM(W) package utilizing the enhanced area of Cu (copper) connector. The low ON-resistance of the new product contributes to reduced conduction losses in electronic devices. Tests are in progress towards obtaining the automotive qualification AEC-Q101[2].


Main Specifications:

Part Number   Absolute Maximum Ratings   Package   RDS(ON) Max @VGS = 10V (mΩ)   Tch (℃)
VDSS (V)   ID (A)
TJ200F04M3L   -40   -200   TO-220SM(W)   1.8   175

[1] In the category of products with the same ratings, as of March 17, 2015. Toshiba survey.
[2] Please contact your local Toshiba sales office for the latest status on the qualification process.

Follow this link for more on Toshiba automotive MOSFETs.

Customer Inquiries:
Automotive Sales & Marketing Department
Tel: +81-3-3457-3428

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