TOKYO — (BUSINESS WIRE) — October 27, 2014 — Toshiba Corporation’s (TOKYO:6502) Semiconductor & Storage Products Company today announced the launch of "TPD7104F", a 1-channel high-side N-channel power MOSFET gate driver. The new product is an all-in-one circuit for charge pumps and can be operated at lower voltages compared to Toshiba conventional products, at VDD(opr) = 5 to 18V. Shipment starts from today.
Toshiba: 1-Channel High-Side N-Channel Power MOSFET Gate Driver for Automotive Applications (Photo: Business Wire)
Key Specifications of the New Product
|1.||BiCD 0.13μm process|
|2.||Supply voltage: VDD(opr)=5 to 18V|
|3.||Built-in overcurrent protection functions|
|4.||Built-in overcurrent diagnostic functions|
|VOUT=VDD+8V(Min)@VDD=5V, IOUT=-100μA, Tj=-40 to 125°C|
|VOUT=VDD+10V(Min)@VDD=8 to 18V, IOUT=-100μA, Tj=-40 to 125°C|
|PS-8 (2.8mm x 2.9mm)|
Automotive applications for driving high-side N-channel MOSFETs used in 12V batteries, including semiconductor relays and semiconductor load switches for idle stop systems and electric power steering (EPS).
 Comparison with “TPD7102F” (VDD=7 to 18V)
Follow this link for more on Toshiba MOSFETs.
Automotive Sales & Marketing Department
Information in this document, including product prices and
specifications, content of services and contact information, is current
on the date of the announcement but is subject to change without prior