Toshiba Launches Low-height Package, Rail-to-Rail Output Gate-drive Photocouplers

TOKYO — (BUSINESS WIRE) — September 5, 2014Toshiba Corporation (TOKYO:6502) today announced the launch of rail-to-rail output gate-drive photocouplers in low-height SO6L packages, for use in directly driving low- to medium-power IGBTs and power MOSFETs. Mass production shipment will start from today.

Toshiba: Low-height SO6L Package, Rail-to-Rail Output Gate-drive Photocoupler (Photo: Business Wire)

Toshiba: Low-height SO6L Package, Rail-to-Rail Output Gate-drive Photocoupler (Photo: Business Wire)

The new photocouplers, “TLP5751” for driving small-power IGBTs and “TLP5752” and “TLP5754” for driving middle-power IGBTs, utilize the low-height SO6L package. At only 54% the height and 43% the mounting area of Toshiba products that use the DIP8 package, the new products can contribute to the development of thinner and smaller sets. In spite of their low height, the products guarantee a creepage distance of 8mm and isolation voltage of 5kV, making them suitable for applications requiring higher isolation specs.

As for electrical characteristics, the new photocouplers have rail-to-rail output which enables higher efficiency by making operation voltage wider in full-swing. They are available in three output currents, 1A, 2.5A and 4A, to meet a wide range of user requirements. They are also embedded with Toshiba’s original high-power infrared LED, allowing it to be used in a wide range of applications, including those that require high thermo-stability, such as factory automation, home photovoltaic power systems, digital home appliances and UPS.

 

 Key Specifications of the New Products 

Part Number   TLP5751   TLP5752   TLP5754
Peak Output Current ±1.0A   ±2.5A   ±4.0A
Power Supply Voltage 15~30V
Supply Current 3mA (max.)
Threshold Input Current 4mA (max.)
Propagation Delay Time 150ns (max.)
Propagation Delay Skew 80ns (max.)
Rail-to-Rail Output Equipped
VUVLO Function Equipped
Creepage Distance 8mm (min.)
Isolation Voltage 5000Vrms (min.)
Common Mode Transient Immunity ±35 kV/µsec
Operation Temperature Range -40~110 ºC
Accommodated power devices  

Low-power
IGBTs (up to
20A class) and
power MOSFETs

 

Middle-power
IGBTs (up to
80A class) and
power MOSFETs

 

Middle-power
IGBTs (up to
100A class) and
power MOSFETs

 

1 | 2  Next Page »



Review Article Be the first to review this article
CST: Webinar September 14, 2017

Aldec

Featured Video
Editorial
Peggy AycinenaWhat Would Joe Do?
by Peggy Aycinena
Real Intent: Leveraging on Investments
More Editorial  
Jobs
Senior Front-End RTL Design AE for EDA Careers at San Jose, CA
Technical Support Engineer EU/Germany/UK for EDA Careers at N/A, United Kingdom
Analog Hardware Engineer for Teradyne Inc at San Jose, CA
FPGA Engineer for Teradyne Inc at San Jose, CA
Field Application Engineer for Teradyne Inc at San Jose, CA
Senior R&D Engineer...Timing Closure Specialist for EDA Careers at San Jose or Anywhere, CA
Upcoming Events
IEEE Electronic Design Processing Symposium 2017 at 673 S. Milpita Blvd Milpitas CA - Sep 21 - 22, 2017
CODES+ISSS 2017, Oct 15-20, 2017, Lotte Hotel, Seoul, South Korea at Lotte Hotel Seoul Korea (North) - Oct 15 - 20, 2017
DVCon 2017 Europe, Oct 16 - 17, 2017, Munich, Germany at Holiday Inn Munich City Centre Munich Germany - Oct 16 - 17, 2017
DownStream: Solutions for Post Processing PCB Designs
TrueCircuits: UltraPLL



Internet Business Systems © 2017 Internet Business Systems, Inc.
25 North 14th Steet, Suite 710, San Jose, CA 95112
+1 (408) 882-6554 — Contact Us, or visit our other sites:
AECCafe - Architectural Design and Engineering TechJobsCafe - Technical Jobs and Resumes GISCafe - Geographical Information Services  MCADCafe - Mechanical Design and Engineering ShareCG - Share Computer Graphic (CG) Animation, 3D Art and 3D Models
  Privacy PolicyAdvertise