EPC to present latest generation eGaN technology at two industry-leading conferences in China – the 3rd Wireless Power World 2014 and IIC China Power Management and Power Semiconductor
EL SEGUNDO, Calif. — (BUSINESS WIRE) — August 14, 2014 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN®) power transistors will deliver application-focused presentations at two industry tradeshows in China:
- The 3rd Wireless Power World 2014, Shanghai, China
EPC experts will show how the superior characteristics of eGaN® FETs, such as low output capacitance, low input capacitance, low parasitic inductances, and small size make them ideal for increasing efficiency in highly resonant, Rezence (A4WP) compliant, wireless power transfer systems. A comparison between amplifiers designed using MOSFETs and eGaN FETS will examine comparative peak power, load variation, and load regulation performance.
Speaker: Dr. Johan Strydom, Vice President, Application Engineering
Date/Time: Tuesday, August 26th at 4.30 – 5.10 p.m.
- The IIC China Power Management and Power Semiconductor Conference, Shenzhen, China
The latest generation eGaN FETs raise the bar for power conversion performance. The new family of eGaN FETs (Gen 4) has significant gains in key switching figures of merit that widen the performance gap with the aging power MOSFET. Application examples will include a 12 V to 1.2 V, 50 A, point of load converter achieving 93.5% efficiency, and a 48 V to 12 V, 30 A, non-isolated DC-DC intermediate bus converter achieving efficiency above 98%.
Speaker: Peter Cheng, Asia Pacific Field Applications Director
Date/Time: Thursday, September 4th at 3.40 p.m. to 4.20 p.m.
About Wireless Power World 2014
Visit http://www.wirelesspower-world.com/meeting/Sponsors/index.html for details.
About IIC China
Visit http://www.english.iic-china.com/ for details.
EPC is the leader in enhancement-mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, solar inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.
Visit our web site: www.epc-co.com
eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.