Efficient Power Conversion (EPC) Introduces Development Boards With Switching Transition Speeds in the Sub-Nanosecond Range and Capable of Hard-Switching Applications Above 10 MHz

Development boards in half-bridge topology with onboard gate drives simplify evaluation of the EPC8000 family of ultra high frequency, high performance eGaN® FETs now available from EPC.

EL SEGUNDO, Calif.— March 2014 — Efficient Power Conversion Corporation (EPC) introduces a family of development boards, the EPC9022 through EPC9030, to simplify evaluation of the groundbreaking EPC8000 family of ultra high frequency eGaN power transistors.

The EPC8000 family of high frequency eGaN FETs has switching transition speeds in the sub-nanosecond range, making them capable of hard-switching applications above 10 MHz – blurring the line between power and RF transistors! Even beyond the 10 MHz for which they were designed, these products exhibit very good small signal RF performance with high gain well into the low GHz range, making them a competitive choice for RF applications. They are ideal for applications, such as wireless power and 65 V and 100 V devices for envelope tracking, where extremely fast power transistor switching is required.

Products in the EPC8000 family are available with on-resistance values from 125 mΩ through 530 mΩ, and three blocking voltage capabilities, 40 V, 65 V and 100 V.

To simplify the evaluation of this family of high frequency, high performance eGaN FETs, EPC is offering a development board for each device in this new product family. The development boards are 2” x 1.5” and contain two eGaN FETs in a half-bridge configuration with minimum switching frequency of 500 kHz. The boards contain all critical components and layout for optimal high frequency switching performance. There are various probe points to facilitate simple waveform measurement and efficiency calculation.

EPC8000 Family Product Specifications and Corresponding Development Board:

eGaN FET
Part Number
VDS (V) RDS(on) Max (mΩ) (VGS = 5 V,
ID =0.5 A)
Peak ID Min (A) (Pulsed, 25 °C,
Tpulse = 300 µs)
Development March 11, 2014Board
         
EPC8004 40 125 7.5 EPC9024
EPC8007 40 260 6 EPC9027
EPC8008 40 325 2.9 EPC9028
EPC8009 65 138 7.5 EPC9029
EPC8005 65 275 3.8 EPC9025
EPC8002 65 530 2 EPC9022
EPC8010 100 160 7.5 EPC9030
EPC8003 100 300 4 EPC9023

Evaluation units of the EPC8000 family of devices are immediately available in 2- and 10-piece packs starting at $23 through Digi-Key Corporation at http://bit.ly/EPC80xxDK

EPC9022 through EPC9030 development boards are priced at $150 each and are available for immediate delivery from Digi-Key at http://bit.ly/EPC902xDK

Design Information and Support for eGaN FETs:

About EPC

EPC is the leader in enhancement mode gallium nitride-based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, solar micro inverters, remote sensing technology (LiDAR), and Class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.

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