New Freescale Airfast RF Power LDMOS Transistors Support the 700 MHz to 2700 MHz Band with a Single Device

Small-footprint AFT27S006N and AFT27S010N RF transistors are industry’s first to cover all major cellular bands while delivering 20 dB to 24 dB of gain

AUSTIN, Texas — (BUSINESS WIRE) — December 9, 2013 — Freescale Semiconductor (NYSE: FSL), the worldwide leader in high-power radio frequency (RF) transistors, introduces two new Airfast RF power solutions that cover all major cellular infrastructure bands and deliver industry-leading gain in a compact package. The AFT27S006N delivers 6 W of peak power and is the next-generation follow-on to the popular MW6S004N product – the industry’s workhorse driver deployed broadly in world-class wireless infrastructure installations worldwide. Freescale is also adding a higher power device to this family, called the AFT27S010N, which delivers 10 W of peak power.

Both devices feature outstanding frequency range (700 MHz to 2700 MHz) and single-stage gain (20 dB to 24 dB), together with an ultra-small footprint package (PLD-1.5W) making them ideally suited for macro base station MIMO applications rated up to 40 W average power. Many competitive solutions require customers to deploy multiple RF devices to support this range, but the AFT27S006N and AFT27S010 support this cellular band range with a single power amplifier.

“These latest additions to Freescale’s Airfast device portfolio will continue the company’s synergistic approach to modern power amplifier design for wireless base stations,” said Lance Wilson, research director for ABI Research. “Additionally, these driver devices offer excellent performance, ease-of-use and a small footprint.”

The Airfast technology platform allows Freescale to improve performance in frequency, range and gain while addressing a host of other customer needs such as ease-of-use and flexibility. The broad frequency range of these new transistors means they can also be used as universal driver devices for a wide array of additional RF applications.

“With this product introduction, Freescale has taken one of its best RF devices and made it better,” said Ritu Favre, senior vice president and general manager of Freescale’s RF business. “Freescale’s advanced LDMOS process technology enables our new Airfast devices to be smaller and more capable across all major cellular frequency bands.”

About Airfast RF power solutions

Airfast RF power solutions are designed to simultaneously meet the challenges of increased efficiency, peak power and signal bandwidth, while addressing the persistent pressure to reduce costs. The products offer outstanding performance and energy efficiency and are included in a range of Freescale RF technologies – LDMOS, GaAs and GaN. For more information, visit

Pricing and availability

The AFT27S006N (6 W) and AFT27S010N (10 W) are in production now. Please contact your local Freescale sales representative for pricing information and to inquire about samples. For more information about Freescale RF power LDMOS solutions, visit

About Freescale

Freescale Semiconductor (NYSE: FSL) is a global leader in embedded processing solutions, providing industry-leading products that are advancing the automotive, consumer, industrial and networking markets. From microprocessors and microcontrollers to sensors, analog integrated circuits and connectivity – our technologies are the foundation for the innovations that make our world greener, safer, healthier and more connected. Some of our key applications and end-markets include automotive safety, hybrid and all-electric vehicles, next generation wireless infrastructure, smart energy management, portable medical devices, consumer appliances and smart mobile devices. The company is based in Austin, Texas, and has design, research and development, manufacturing and sales operations around the world.

Freescale and the Freescale logo are trademarks of Freescale Semiconductor, Inc., Reg. U.S. Pat. & Tm. Off. Airfast is a trademark of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © 2013 Freescale Semiconductor, Inc.


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