SHEFFIELD, England — (BUSINESS WIRE) — May 15, 2013 — sureCore Ltd has announced that it has secured a Technology Strategy Board SMART award of £250K to help realise the company’s low power SRAM technology in a leading edge next generation silicon process node.
Working with the major foundries developing FDSOI and FinFET technologies, the grant will be used to contribute to the development of a demonstrator chip that will be used to showcase sureCore’s patented array control and sensing scheme, which significantly lowers active power consumption. Through a combination of detailed analysis and using advanced statistical models sureCore has designed an SRAM memory consuming less than half the power of existing solutions.
Paul Wells, CEO of sureCore, commented “We are pleased that the TSB has recognised the potential of our technology by awarding this grant. We have proven the technology in simulation but to fully characterise and demonstrate its benefits implementation in silicon is a must. This is a critical next step in demonstrating the value of our IP to our customers.”
sureCore Ltd is a semiconductor IP company based in Sheffield UK focusing on low power physical IP for next generation silicon process technologies. sureCore is developing low power and variability tolerant design techniques that are applicable to a wide range of IP solutions. Initially focused on SRAM, sureCore IP will help SoC developers meet both the power and manufacturability constraints posed by leading edge process nodes.