Four 60V MOSFETs in a Single Package Increases System Efficiency, Replaces Diode Bridge for Compact Design and Reduced Board Space
SAN JOSE, Calif. — (BUSINESS WIRE) — April 29, 2013 — Excessive heat generation in high-definition, compact active bridge applications such as network cameras can cause image quality issues. Similarly, thermally induced noise can affect the system’s image sensors which can also degrade the camera’s picture quality. The typical heat sinking solution to regulate thermal fluctuations can further complicate these intricate designs with added component count and cluttered board space. Fairchild Semiconductor’s (NYSE: FCS) FDMQ86530L 60V quad-MOSFET provides designers with an all-in-one package to help with these critical design challenges.
Comprised of four 60V N-Channel MOSFETs and utilizing Fairchild’s GreenBridge™ technology, the FDMQ86530L solution improves the conduction loss and efficiency of the conventional diode bridge providing a ten-fold improvement in power dissipation. Available in a thermally enhanced, space-saving 4.5 x 5.0 mm MLP 12-lead package, the device eliminates the need for a heat sink enabling a compact design that increases power conversion efficiency in 12 and 24V AC applications.
- Max RDS(ON) = 17.5 mΩ at VGS = 10V, ID = 8A
- Max RDS(ON) = 23 mΩ at VGS = 6V, ID = 7A
- Max RDS(ON) = 25 mΩ at VGS = 4.5V, ID = 6.5A
Packaging and Pricing Information (in US 1,000 quantity pieces)
Samples available upon request - Delivery 8-12 weeks ARO
- The FDMQ86530L product is available in a 4.5 x 5.0mm MLP 12-lead package and is priced at $1.38
Part of Fairchild’s comprehensive discrete MOSFET portfolio, the FDMQ86530L offering further establishes the company’s commitment to providing the most innovative packaging technologies for minimizing size, maximizing thermal performance and efficiency in today’s most advanced systems.
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Note to Editor: For a datasheet in PDF format, please go to:
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