Reduces 30% of RON and achieves reverse recovery time of one-third of existing products
TOKYO — (BUSINESS WIRE) — April 3, 2013 — Toshiba Corporation (TOKYO: 6502) has launched high-speed diodes based on the 4th generation 600V system super junction MOSFET "DTMOSIV" series. Using the latest single epitaxial process, the new series has reduced the RON•A (On-resistance per area) by approximately 30%(Note1) compared to existing products, to achieve the leading level in the industry. (Note2) Also, high-speed parasitic diodes achieve a reverse recovery time of approximately one-third that of existing products(Note3), reducing loss and contributing to improved power efficiency.
Toshiba: 600V System Super Junction MOSFET DTMOSIV High-Speed Diode Series (Left to right; TO-220SIS package and TO-3P(N) package) (Photo: Business Wire)
(Note1) Compared to the previous "DTMOSIII" series. Toshiba data.
(Note2) As of April 2, 2013. Toshiba data.
(Note3) Compared to the existing product "TK16A60W." As of April 3, 2013. Toshiba data.
Switching power supplies, micro inverters, adaptors and photovoltaic inverters
1. 30% reduction in RON•A compared with existing products (DTMOSIII series).
2. High-speed parasitic diodes achieve a reverse recovery time of approximately one-third that of existing products.
3. Use of the single epitaxial process secures small increases in ON-resistance and reverse recovery times at high temperatures.
4. Wide line-up for ON-resistance (0.65 to 0.074Ω)
5. Wide line-up of packages
|Part number||Absolute maximum rating||RDS(ON) Max (Ω)||Qg Typ. (nC)||Ciss Typ. (pF)||trr Typ. (ns)||Package|
|VDSS (V)||I D (A)||V GS =10V|