Dolphin Integration first to achieve 0.84 pA per bit in SpRAM at the 90 nm uLL embedded flash process

Grenoble, France -- Dec. 7, 2012 -- Dolphin Integration announces that the memory architecture RHEA, achieving leakage as low as 0.84 pA/bit at 90 nm uLL embedded flash process has now passed the pre-silicon assessment criteria (Level 1) of TSMC’s stringent IP9000 qualification program.

“We are happy to announce that the SpRAM RHEA generator is now available free of charge, for all TSMC 90 nm uLL process users. The RHEA architecture not only provides the best combination of density and leakage, but also features the capability to operate down to 1.0 V ± 10% at the 90 nm uLL process. This is the right SpRAM architecture to meet the challenging needs of MCUs in automotive, consumer and industrial applications”, said Elsa BERNARD-MOULIN, Dolphin Integration Marketing Manager for Libraries.

Dolphin Integration plays up the benefits of moving down to a 90 nm uLL process node:

  • Storage capacity of more than 800 kbits/mm2
  • Access time of 195 MHz for a 4k x 32 memory cut RHEA
  • Equivalent leakage at 90 nm uLL versus 180 nm uLL thanks to source biasing implementation and a mix of HVT and SVT MOS, together with dynamic power consumption divided by 3


The SpRAM RHEA Generator is "Foundry Sponsored".

For more information about this product, feel free to download the Presentation Sheet or to contact Dolphin’s Library Marketing Manager at Email Contact

To request a free access to the FE generator for evaluation purpose or to the BE generator for integration, please click here.

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