This work describes a concept of an isolated highvoltage
(HV) n-channel LDMOS transistor, which can be used
as a high-side switch instead of a HV PMOS transistor. HV nchannel
LDMOSFETs for 120V applications (blocking voltage
over 150V) were used in the study. The devices were fabricated
in a 0.35 ìm CMOS-based HV technology. Hot carrier stress
experiments (under gate voltage VGS = 10V and drain voltage
VD = 120V) were performed for device reliability evaluations.
The devices with non-uniformly optimized n-well show an
excellent trade-off between blocking voltage (BV) and onresistance
while keeping hot carrier induced degradation low.
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Editorial
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