There have been so far a lot of attempts of integrating photodetectors into standard
CMOS and BiCMOS processes. The kinds of detectors that have been taken into
consideration were either quite simple pn-junctions (1), combinations of vertically
arranged pn-junctions in form of double photodiodes (DPD) (2), lateral finger structures
of metal stripes or heavily doped p/n diffusions (3,4), and PIN-junctions (5,6). Detectors
with a built-in amplification for the detection of weak signals like avalanche photodiodes
(APDs) (7), bipolar phototransistors (8), and heterojunction bipolar phototransistors (9)
have also been demonstrated.
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Editorial
Upcoming Events
DAC 2012 at San Francisco CA - Jun 3 - 7, 2012
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