SiGe-heterojunction bipolar transistors (HBTs) still sustain their
leading RF-application position due to their good noise and HF
properties. They also offer a relatively high operating voltage, which
is limited by BVCEO, the emitter collector breakdown voltage with
open base. We show that BVCER, the avalanche breakdown with a
resistor RB connected to the base, can be used to define reliable
operating conditions exceeding BVCEO. The measured BVCER data
correlate very well with values calculated from basic transistor
parameters and their corresponding multiplication factor data.
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Editorial
Upcoming Events
DAC 2012 at San Francisco CA - Jun 3 - 7, 2012
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