A group of leading semiconductor companies have developed a roadmap for leveraging CMOS designs intended for manufacturing on bulk silicon to fabricate ICs on fully depleted silicon-on-insulator (FD-SOI) substrates with ultra-thin buried oxide layers, producing chips with improved performance and lower operating power. This white paper shows that porting circuits from bulk silicon to FD-SOI can be very direct, depending on the FD-SOI technology used by a specific chipmaker.
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Editorial
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