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The design and implementation of a high isolation buffer amplifier is presented. This IC uses a two gain stage topology processed in the Avago Technologies Enhancement Mode pHEMT GaAs technology and is packaged in the 8-lead 2mm x 2mm LPCC. It operates preferably from a 5 Volt supply and consumes approximately 35 mA quiescent current. By varying an external bias resistor, the buffer amplifier can deliver maximum output power up to 20 dBm at 2 GHz. It has better than 40 dB of input-output port isolation and operates from 0.5 GHz to 6 GHz.
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