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E-pHEMT (enhancement-mode high-electron mobility transistor) is a semiconductor process optimized for wireless applications that operate from a single positive voltage source. Ordinary depletion-mode pHEMTs conduct at zero gate bias, or when the drain current, Id, reaches a saturated level (Idss) at a gatesource voltage (Vgs) of 0 VDC. An E-pHEMT shows no conduction at zero gate bias, so that Id = 0 at Vgs = 0V. Thus, it can operate without the negative voltage (required for switch on) required for depletionmode devices.
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