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Posts Tagged ‘FDSOI’

Herb Reiter: The three-legged stool of Technology Choices

Thursday, September 5th, 2013


Herb Reiter, founder and president of eda2asic, has been in the semiconductor and EDA industry for 30+ years, including stints at Barcelona Design, Viewlogic, Synopsys, VLSI Technology, and National Semiconductor. In the last few years, Reiter’s work has focused on SOI, 2.5/3D ICs, and FinFET topics in semiconductor design and manufacturing. Straightforward enough, until you realize that these are significantly different ‘3D’ technologies, where ‘3D’ means different things to different people.

In a recent phone call, I asked Reiter to distinguish between what he calls the “three legs” of technology choices and to weigh in on which “leg” is most likely to succeed.

Fully-depleted SOI …

Per Reiter, “The original technology was partially-depleted SOI, a fairly thin film of silicon on top of a thin insulating layer. IBM came up with the idea, because substrate capacitance was slowing their chips down. They realized if they put in the insulating layer, they wouldn’t have to worry about substrate capacitance, because the oxide layer would insulate things.

“The planar transistor gate cannot reach all of the electrons in an 80-nanometer channel, cannot fully control the flow, and causes what we called ‘body-effect’ and ‘kink-effect’ design challenges. That’s why partially-depleted SOI was not widely used. So fully-depleted silicon on insulator, FDSOI, was introduced. It only has about a 20-nanometer active film on top of the oxide layer. The gate is sitting on top of the active film and can control all of the electrons passing through the source/drain channel, which is why it’s called fully-depleted SOI.


GSS: a spirited defense of FDSOI

Thursday, December 13th, 2012


When it comes to stimulating, it doesn’t get better than stepping out of a session at IEDM in San Francisco to take a conference call from Glasgow. On Tuesday, December 11th, I stepped out of Session 9 and a presentation on spintronics to speak with Dr. Asen Asenov about a different device technology.

Asenov is a 20-year veteran of the University of Glasgow, where he serves as James Watt Professor of Electrical Engineering and heads up the Glasgow Device Modeling Group. He is also founder of Glasgow-based Gold Standard Simulations (GSS), a company that specializes in simulating statistical variability in nano-CMOS devices.

We spoke on December 11th because GSS announced that day the results of research “comparing the differentiation between metal gate first and metal gate last FDSOI [fully-depleted silicon-on-insulation] approaches, and comparing it to equivalent bulk MOSFETs.” Based on that work, the company announced that gate-last technology “offers significant advantages” over gate-first technology for devices built on 32- or 28-nanometer FDSOI, and noted that both nodes “significantly outpace equivalent bulk MOSFETS with respect to low-power SRAM design.”


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