After years of research, a new memory technology emerges that combines the best attributes of DRAM and NAND, promising to “completely evolve how it’s used in computing.”
Memory and storage technologies such as DRAM and NAND have been around for decades, with their original implementations able to perform only at a fraction of the level achieved by today’s latest products. But those performance gains, like most in computing, are typically evolutionary, with each generation incrementally faster and more cost effective than the one preceding it. Quantum leaps in performance often come from completely new or radically different ways of solving a particular problem. The 3D XPoint technology announced by Intel in partnership with Micron comes from the latter approach.
“This has no predecessor and there was nothing to base it on,” said Al Fazio, Intel senior fellow and director of Memory Technology Development. “It’s new materials, new process architecture, new design, new testing. We’re going into some existing applications, but it’s really intended to completely evolve how it’s used in computing.”
Touted as the biggest memory breakthrough since the introduction of NAND in 1989, 3D XPoint is a new memory technology that is non-volatile like NAND memory, but is up to 1,000 times faster, with a faster speed only attainable by DRAM, and with endurance up to 1,000 times better than NAND. (more…)