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Posts Tagged ‘double-patterning’

Hurricane FinFET (Part 2)

Wednesday, March 9th, 2016

So, FinFETs rule! They give the designer so much flexibility in trading off power and performance that it should be a no-brainer to adopt the technology–right?

Well, every silver lining has to have a cloud, and in the case of FinFETs there are quite a few.

I polled a number of layout designers who have first-hand experience of laying out FinFET designs and asked them “What’s the impact of FinFET?”. Here’s what they told me requires them to do extra work:

  • First off is the sheer number of rules that they have to be conscious of. The number of rules has more than doubled compared to a 40-nm process. Of special concern are some of the density rules that now have to be applied to a lot more layers.
  • Another area you have to pay particular attention to is maximum diffusion space. This forces devices to have guardrings around them so that you do not have too large a diffusion space. The diffusion in the guardring essentially breaks the space check. So you either have to have devices very close together or spaced by guardrings.
  • Process restrictions require that every fin has to have an equal height. In addition there are strict limitations on the sizes of “W” and “L” that can be used. As a result a device that requires a large “W” (width) has to be quantized into multiple fin units that utilize the acceptable “W” and “L”.
    What this means in practice is that an innocent-looking single device in the schematic can be 100 devices in the physical layout! Add to that the fact that fins have to snap to specific grids and you have a massive layout challenge for even a simple circuit.

(more…)

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