A few months ago at 2012 San Jose SNUG, I attended the FinFET keynote speech by Professor Chenming Hu, the Father of FinFET. Professor Hu’s speech was exceptionally well received by the audience (more than 400 people). I had the opportunity to meet him . Because his keynote was really informative and because FinFET technology is an innovative and captivating subject, I asked Professor Hu to share more of his insights and vision on the FinFET technology with us.
Dr. Chenming Hu has been called the Father of 3D Transistors for leading FinFET development in 1999. Intel is the first company to use FinFET in 2011 production calling it the most radical shift in semiconductor technology in over 50 years. Other companies are expected to follow. IEEE called him “Microelectronics Visionary” and noted his pioneering contributions to integrated circuit reliability in presenting him the Nishizawa Medal for “achievements critical to producing smaller yet more reliable and higher-performance integrated circuits”. US Semiconductor Industry Association thanked him for research leadership for “advancement of the electronics industry and of our national economy”. IEEE EDS gave him the 2011 Education Award for “distinguished contributions to education and inspiration of students, practicing engineers and future educators”.
He has authored four books including a new textbook and 900 research papers, and has been granted over 100 US patents. He is a fellow of the IEEE and an Honorary Professor of CAS Microelectronics Institute and National Chiao Tung University. His many awards include the 2007 Andrew Grove Award for device reliability research and the 2002 Donald Pederson Award in Solid State Circuits for the BSIM standard transistor model. The 2009 SRC Aristotle Award recognized him as an influential mentor to many outstanding students. He has received UC Berkeley’s highest honor for teaching — the Berkeley Distinguished Teaching Award. He is researching green tunnel transistor for ultra-low-power electronics.