Deep Trench 'Super Junction' Technology Reduces ON Resistance 60 Percent Compared to Conventional MOSFET Technology
The super junction structure, which has vertical paths to allow electrical current to flow through easily on a silicon substrate, realizes lower RDSON than the theoretical limit of silicon. By applying this super junction structure and optimizing the total device, the RDSON for the same area in Toshiba's DTMOS device achieves a 60 percent reduction and its gate charge (Qg) achieves a 40 percent reduction compared with Toshiba's conventional MOSFETs. Consequently, RDSON* Qg (See note 1), a characteristic that is one important performance index for MOSFETs (in which smaller is better), is one- fourth the value of the company's conventional MOSFETs.
With this announcement, Toshiba is combining a super junction structure with the company's original Deep Trench MOSFET (DTMOS) technology. This is the first in the market using super junction structure combined with deep trench technology.
The first device in the family, designated TK15A60S, features maximum ratings of 15 Amp (A) and 600 volt (V) with on resistance of 0.3 Ohm and will begin sampling in March 2005.
"We're very pleased to introduce the first member of our DTMOS product line, targeted at achieving significant reductions in power consumption in the mainstream switch mode power supply and ballast lighting markets with a 600V, 15A device," said Brach Cox, business development manager, power devices, in Toshiba's Discrete Business Unit.
Background of the Development
Recently, reduction of power consumption and miniaturization of consumer electronics have been in strong demand, and consequently, lower RDSON in power MOSFETs has been a target to improve their power efficiency. In order to respond to the demand for lower power consumption, Toshiba is commercializing a new product utilizing DTMOS technology which can improve efficiency of power supplies. Toshiba succeeded in the development of DTMOS because of its broad repertoire of power MOSFET devices and development expertise and device technology.
Specifications for Toshiba's First DTMOS MOSFET
Part Number TK15A60S
Drain-source voltage (maximum rating) 600V
Gate-source voltage (maximum rating) +/-30V
Drain current (maximum rating) 15A
Gate threshold voltage 3.0 to 5.0 V
Drain-source ON resistance 0.3 Ohm (maximum)
Gate charge 27 nanoColoumbs (nC, typical)
Features
* Due to the super junction structure, RDSON reaches 0.3 Ohm (maximum).
* At this time, Toshiba is the first to utilize a super junction
structure with deep trench technology on a silicon substrate.
* The device uses a TO-220SIS package, which is widely used in the
market, and enables conventional products to be replaced easily.
Pricing and Availability
Samples of Toshiba's TK15A60S 15A, 600V DTMOS are scheduled for availability in March 2005, priced at $2.90 each.
Toshiba's Discrete Products
Since 1986, Toshiba has ranked as the top discrete supplier on a worldwide basis. According to its most recent report, Gartner Dataquest (San Jose, Calif.) ranks Toshiba as the top supplier according to revenue from worldwide shipments of total discrete products for 2003. More specifically, Toshiba leads in worldwide market share in a number of discrete product categories, including power transistors, LMOS logic, CMOS logic, visible laser diodes and photocouplers. With the company's understanding of market requirements and combining target applications with the right products, Toshiba continues to deliver solutions that lead the industry in innovation, quality and value. The company's discrete devices are designed to meet the growing demand for high performance and lower voltages in today's wireless telecom and consumer electronics applications while emphasizing its strength in the automotive and industrial markets.
*About TAEC
Combining quality and flexibility with design engineering expertise, TAEC brings a breadth of advanced, next-generation technologies to its customers. This broad offering includes memory and flash memory-based storage solutions, a broad range of discrete devices, displays, medical tubes, ASICs, custom SOCs, microprocessors, microcontrollers and wireless components for the computing, wireless, networking, automotive and digital consumer markets.
TAEC is an independent operating company owned by Toshiba America, Inc., a subsidiary of Toshiba, on of the five largest semiconductor companies worldwide in terms of global sales for the year 2004 according to Gartner/Dataquest's Worldwide Semiconductor Market Share Ranking. Toshiba is a world leader in high-technology products with more than 300 major subsidiaries and affiliates worldwide. For additional company and product information, please visit TAEC's website at chips.toshiba.com. For technical inquiries, please e-mail Email Contact.
(1) The product of on-state resistance and gate charge. The smaller
this value is, the better the performance of the MOSFET.
Information in this press release, including product pricing and specifications, content of services and contact information, is current on the date of the announcement, but is subject to change without prior notice. Technical and application information contained here is subject to the most recent applicable Toshiba product specifications. In developing designs, please ensure that Toshiba products are used within specified operating ranges as set forth in the most recent Toshiba product specifications and the information set forth in Toshiba's "Handling Guide for Semiconductor Devices," or "Toshiba Semiconductor Reliability Handbook." This information is available at http://chips.toshiba.com/, or from your TAEC representative.
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CONTACT: Carol Bardia of MultiPath Communications, +1-949-481-5867,
Email Contact, for Toshiba America Electronic Components; or Lisa
Nemec of Toshiba America Electronic Components, Inc., +1-949-623-3099,
Email Contact
Web site: http://chips.toshiba.com/